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ON Semiconductor NTP360N80S3Z SUPERFET® III MOSFET is a high-performance MOSFET that offers 800V breakdown voltage (VBR(DSS)). This SUPERFET is optimized for the primary switch of a flyback converter and enables lower switching losses and case temperature without sacrificing EMI performance. The NTP360N80S3Z SUPERFET comes with an internal Zener diode that significantly improves the Electro Static Discharge (ESD) capability. Typical applications include adapters/chargers, LED lighting, AUX power, audio, and industrial power.

  • Optimized for the primary switch of a flyback converter
  • Enables lower switching losses and case temperature
  • Internal Zener diode improves ESD capability
  • 800V drain-to-source voltage (VBR(DSS))
  • 360mΩ maximum drain-to-source resistance RDS(on)
  • 25.3nC typical ultra-low gate charge (Qg)
  • 13A drain current (ID)
  • 2.72µJ @ 400V low stored energy in output capacitance (Eoss)
  • 100% avalanche tested


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