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NVBG160N120SC1 160mΩ SiC MOSFET

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ON Semiconductor NVBG160N120SC1 160mΩ SiC MOSFET provides superior switching performance and higher reliability compared to Silicon. This MOSFET features 1200V drain-to-source voltage (VDSS) and 19.5A maximum drain current (ID). The NVBG160N120SC1 MOSFET offers low ON resistance and compact chip size that ensures low capacitance and gate charge. This MOSFET provides high efficiency, faster operation frequency, increased power density, reduced Electro-Magnetic Interference (EMI), and reduced system size. The NVBG160N120SC1 MOSFET is qualified for automotive applications like automotive onboard chargers and automotive DC/DC converters for EV/HEV according to the AEC-Q101 standards.

  • Superior switching performance and higher reliability compared to Silicon
  • 160mΩ typical drain-to-source resistance (RDS(on))
  • 1200V drain-to-source resistance (V(BR)DSS)
  • 19.5A maximum drain current (ID)
  • 33.8nC ultra-low gate charge (QG(tot))
  • 50.7pF low effective output capacitance (typical) (COSS)
  • Qualified for automotive applications according to AEC-Q101
  • 100% avalanche tested

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