NTMFS015N10MCLT1G Single N-Channel Power MOSFET

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ON Semiconductor NTMFS015N10MCLT1G Single N-Channel Power MOSFET is designed for compact and efficient designs that require high thermal performance. This MOSFET offers low drain-to-source resistance (RDS(on)) to minimize conduction losses and low gate charge (QG) and capacitance to minimize driver losses. The NTMFS015N10MCLT1G MOSFET comes in a small DFN5 package with 5mm x 6mm dimensions. Typical applications include primary DC-DC MOSFET, Synchronous Rectifier (SR) in DC-DC and AC-DC, motor drives, and SR in USB Type-C.

  • Low RDS(on) to minimize conduction losses:
    • 12.2mΩ @ 10V (maximum)
    • 18.3 mΩ @ 4.5V (maximum)
  • Low QG and capacitance to minimize driver losses
  • 100V drain-to-source voltage (VDSS)
  • 54A drain current (ID)
  • Small footprint (5mm x 6mm) for compact design
  • DFN5 package

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