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STMicroelectronics STGWA20IH65DF 650V 20A Soft-Switching IGBT

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STMicroelectronics STGWA20IH65DF 650V 20A Soft-Switching IGBT (Insulated Gate Bipolar Transistor) features a proprietary trench gate field-stop structure and is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a device specifically designed to maximize efficiency for resonant and soft-switching applications.

The STMicroelectronics STGWA20IH65DF IGBT is provided in a TO-247-3 long lead package.

  • Designed for soft-commutation
  • 650V collector-emitter voltage
  • 20A continuous collector current at TC = 100°C
  • VCE(sat) = 1.55V (typical) at IC = 20A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Low drop voltage freewheeling co-packaged diode
  • Positive VCE(sat) temperature coefficient
  • 159W total power dissipation at TC = 25°C
  • -55°C to +175°C operating junction temperature range
  • TO-247-3 long lead package


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