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STMicroelectronics STGWA20IH65DF 650V 20A Soft-Switching IGBT (Insulated Gate Bipolar Transistor) features a proprietary trench gate field-stop structure and is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a device specifically designed to maximize efficiency for resonant and soft-switching applications.
The STMicroelectronics STGWA20IH65DF IGBT is provided in a TO-247-3 long lead package.