BYC30Y-600P Hyperfast Power Diode
WeEn Semiconductors BYC30Y-600P Hyperfast Power Diode features low leakage current, low reverse recovery current, and 2-lead IITO220 plastic package.
Product Overview
WeEn Semiconductors BYC30Y-600P Hyperfast Power Diode features low leakage current, low reverse recovery current, and 2-lead IITO220 plastic package. This power diode reduces switching losses in associated MOSFET or IGBT. The BYC30Y-600P diode offers low thermal resistance. This power diode functions at 1.8V maximum forward voltage, 30A average forward current, and 600V repetitive peak reverse voltage. The BYC30Y-600P diode operates at 175°C junction temperature and stored at -65°C to 175°C temperature range. Typical applications include active PFC in air conditioner, high-frequency switched-mode power supplies, and Continuous Current Mode (CCM) Power Factor Correction (PFC).
Features & Specs
- 1.8V maximum forward voltage
- 30A average forward current
- 600V repetitive peak reverse voltage
- 175°C junction temperature
- -65°C to 175°C storage temperature range
- 35ns maximum reverse recovery time
- 60A repetitive peak forward current
Documentation
Customer Reviews
Stock and Customer Discounts
Available Discounts
- $2.80 | 25+ units
- $2.66 | 100+ units