Transphorm Gen IV SuperGaN FET - 650V, 35mOhm
COM-17218
Transphorm Gen IV SuperGaN FET - 650V, 35mOhm
SKU: COM-17218
Out of stock
SKU
COM-17218
Transphorm Gen IV SuperGaN™ FETs are normally-off devices that enable the AC-DC bridgeless totem-pole PFC designs.
Product Overview
Transphorm Gen IV SuperGaN™ FETs are normally-off devices that enable the AC-DC bridgeless totem-pole PFC designs. These FETs feature high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN™ platform comes with advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge.
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Features & Specs
- Mounting Style: Through Hole
- Package/Case: TO-247-3
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Vds - Drain-Source Breakdown Voltage: 650V
- Id - Continuous Drain Current: 46.5A
- Rds On - Drain-Source Resistance: 41 mOhms
- Vgs - Gate-Source Voltage: -20V, +20V
- Vgs th - Gate-Source Threshold Voltage: 4.8V
- Qg - Gate Charge: 22nC
- Minimum Operating Temperature: -55C
- Maximum Operating Temperature: +150C
- Pd - Power Dissipation: 156W
- Channel Mode: Enhancement
- Fall Time: 10ns
- Rise Time: 10ns
- Typical Turn-Off Delay Time: 94ns
- Typical Turn-On Delay Time: 60ns
Documentation
Customer Reviews
Transphorm Gen IV SuperGaN FET - 650V, 35mOhm
COM-17218
Stock and Customer Discounts
$20.95 retail price.
Available Discounts
- $19.90 | 25+ units
- $18.86 | 100+ units