ON Semiconductor NTD360N80S3Z SUPERFET® III MOSFET
The NTD360N80S3Z SUPERFET® III MOSFET is optimized for the primary switch of a flyback converter that enables lower switching losses and case temperature.
Product Overview
ON Semiconductor NTD360N80S3Z SUPERFET® III MOSFET is optimized for the primary switch of a flyback converter that enables lower switching losses and case temperature. This MOSFET incorporates an internal Zener diode that improves the ESD capability. The NTD360N80S3Z MOSFET features 800V drain-to-source voltage (VDSS), 360mΩ maximum drain-to-source resistance RDS(on), and 13A maximum drain current (ID). Typical applications include adapters/chargers, LED lighting, AUX power, audio, and industrial power.
Features & Specs
- Low switching loss
- High efficiency
- Good EMI performance
- Improved ESD capability with the internal Zener diode
- 360mΩ maximum RDS(on)
- 800V VDSS
- 13mA ID
- 25.3nC typical ultra-low gate charge (Qg)
- 2.72µJ at 400V low stored energy in the output capacitance (Eoss)
Documentation
Customer Reviews

Stock and Customer Discounts
Available Discounts
- $3.75 | 25+ units
- $3.56 | 100+ units